triquint semiconductor texas: phone (972)994-8465 fax (972) 994-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 1 15 16 17 18 19 20 42 42.2 42.4 42.6 42.8 43 frequency (ghz) p1db (dbm) -35 -25 -15 -5 5 15 25 40 41 42 43 44 45 46 47 frequency (ghz) small signal gain (db) q-band driver amplifier tga4042 key features ? typical frequency range: 41 - 45 ghz ? 18 dbm nominal p1db ? 14 db nominal gain ? 17 db nominal return loss ? on-chip power detector ? bias 6 v, 168 ma ? 0.25 um 2mi phemt technology ? chip dimensions 3.20 x 2.18 x 0.1 mm (0.126 x 0.086 x 0.004) in primary applications ? point-to-point radio ? military radar systems ? q band sat-com preliminary measured data bias conditions: vd = 6 v, id = 168 ma gain orl irl note: datasheet is subject to change without notice.
triquint semiconductor texas: phone (972)994-8465 fax (972) 994-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 2 table i maximum ratings 1/ symbol parameter value notes vd drain voltage 8 v 2/ vg gate voltage range -5 to 0 v id drain current 294 ma 2/ 3 / ? ig ? gate current 14 ma 3/ p in input continuous wave power 21 dbm p d power dissipation 3.3 w 2/ 4 / t ch operating channel temperature 150 0 c5 / 6 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ total current for the entire mmic. 4/ when operated at this bias condition with a base plate temperature of 70 0 c, the median life is reduced to 1e+6 hrs. 5/ junction operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ these ratings apply to each individual fet. tga4042 table ii dc probe tests (ta = 25 0 c, nominal) symbol parameter min. typ. max. units i dss,q1 saturated drain current 20 57 94 ma g m,q1 transconductance 44 75 106 ms v bvgs,q1 breakdown voltage gate-source -30 -21 -8 v v bvgd,q1 & q3 breakdown voltage gate-drain -30 -21 -8 v v p,q1-q6 pinch-off voltage -1.5 -1 -0.5 v q1& q2 are 200 um fets, q3 & q4 are 240 um fets, q5 & q6 are 400 um fets
triquint semiconductor texas: phone (972)994-8465 fax (972) 994-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 3 parameter typical units frequency range 41 - 45 ghz drain voltage, vd 6 v drain current, id 168 ma gate voltage, vg -0.5 v small signal gain, s21 14 db input return loss, s11 17 db output return loss, s22 20 db output power @ 1 db compression gain, p1db 18 dbm table iii electrical characteristics (ta = 25 0 c, nominal) table iv thermal information parameter test conditions t ch ( o c) r jc ( c/w) t m (hrs) r jc thermal resistance (channel to backside of carrier) vd = 6 v i d = 168 ma pdiss = 1.008 w 92.58 22.40 2.7e+8 note : assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. tga4042
triquint semiconductor texas: phone (972)994-8465 fax (972) 994-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 4 preliminary measured data bias conditions: vd = 6 v, id = 168 ma, room temp. 5 6 7 8 9 10 11 12 13 14 15 16 17 40 41 42 43 44 45 46 47 frequency (ghz) gain (db) 16.0 16.5 17.0 17.5 18.0 18.5 19.0 42 42.1 42.2 42.3 42.4 42.5 42.6 42.7 42.8 42.9 43 frequency (ghz) p1db (dbm) tga4042
triquint semiconductor texas: phone (972)994-8465 fax (972) 994-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 5 preliminary measured data bias conditions: vd = 6 v, id = 168 ma, room temp. -35 -30 -25 -20 -15 -10 -5 0 40 41 42 43 44 45 46 47 frequency (ghz) input return loss (db) -35 -30 -25 -20 -15 -10 -5 0 40 41 42 43 44 45 46 47 frequency (ghz) output return loss (db) tga4042
triquint semiconductor texas: phone (972)994-8465 fax (972) 994-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 6 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 42.00 42.25 42.50 42.75 43.0 0 frequency (ghz) sm all signal gain (db) preliminary measured data bias conditions: vd = 6 v, id = 168 ma +25 0 c 0 0 c +75 0 c tga4042
triquint semiconductor texas: phone (972)994-8465 fax (972) 994-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 7 mechanical drawing gaas mmic devices are susceptible to damage from el ectrostatic discharge. pr oper precautions should be observed during handling, assembly and test. tga4042
triquint semiconductor texas: phone (972)994-8465 fax (972) 994-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 8 idet chip assembly diagram gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. power detector bias circuit note: 1. with no rf power applied, adjust rdet until idet = icomp (approx 41ua) and record vdet. 2. record vdet as pout increases. detector sensitivity at a particular pout is defined as delta between vdet at pout of interest and vdet with no pout. +5v a a rcomp = 100k rdet = ~100k icomp vcomp sense vdet sense 0.01 uf 0.01 uf tga4042
triquint semiconductor texas: phone (972)994-8465 fax (972) 994-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 9 power detector performance over temperature 0 20 40 60 80 100 120 140 160 180 200 220 -15 -12 -9 -6 -3 0 3 6 9 12 15 pout (dbm) detector sensitivity (mv) 0c 25c 75c 0 20 40 60 80 100 120 140 160 180 200 220 -15 -12 -9 -6 -3 0 3 6 9 12 15 pout (dbm) detector sensitivity (mv) 0c 25c 75c tga4042
triquint semiconductor texas: phone (972)994-8465 fax (972) 994-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 10 assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. pr oper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 0 c (30 seconds max). ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? maximum stage temperature is 200 0 c. tga4042
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